FDP2D3N10C datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 100 A
* Extremely Low Reverse Recovery Charge, Qrr
* 100% UIL Tested
* RoHS Compliant Applications
* Synchr.

Application

* Synchronous Rectification for ATX / Server / Telecom PSU
* Motor Drives and Uninterruptible Power Supplies

Description

This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in .

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